2001. 2. 24 1/2 semiconductor technical data KTC3878S epitaxial planar npn transistor revision no : 2 high frequency low noise amplifier application. hf, vhf amplifier application. feature low noise figure : nf=3.5db(max.) (f=1mhz). maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 1 ) note : h fe classification r:40 80 , o:70 140 , y:120 240 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =20v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =2v, i c =0 - - 1.0 a dc current gain h fe (note) v ce =12v, i c =2ma 40 - 240 collector-emitter saturation voltage v ce(sat) i c =10ma, i b =1ma - - 0.4 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma - - 1.0 v transition frequency f t v ce =10v, i c =2ma 80 120 - mhz reverse transfer capacitance c re v cb =10v, i e =0, f=1mhz - 2.2 3.0 pf collector-base time constant c c rbb? v ce =10v, i e =-1ma, f=30mhz - 30 50 ps noise figure nf v ce =10v, i e =-1ma, f=1mhz, rg=50 u - 2.0 3.5 db characteristic symbol rating unit collector-base voltage v cbo 35 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 4 v collector current i c 100 ma emitter current i e -100 ma collector power dissipation p c 150 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 h rank type name marking lot no. f fe
2001. 2. 24 2/2 KTC3878S revision no : 2 10 3 100 -5 -3 -0.3 -0.1 emitter current i (ma) e y - i e emitter current i (ma) -0.1 -0.3 -3 -5 100 re 5 reverse transfer admittance 10 3 2 collector-emitter voltage v (v) ce collector-emitter voltage v (v) ce 2 500 3 100 re e y ( s) y - v re ce re y ( s) -1 30 50 common emitter v =6v f=1mhz =-90 ta=25 c ce re e fe y - i y (ms) forward transfer admittance fe y (ms) forward transfer admittance fe fe , ce fe y - v fe , -1 5 30 50 common emitter v =6v f=1mhz ta=25 c ce y r, o, y fe fe r, o, y fe phase angle of forward transfer admittance ( ) -5 -3 -0.5 -0.3 -1 -10 reverse transfer admittance 4 6 8 10 12 14 16 5 10 30 50 100 common emitter i =-1ma e 4 6 8 10 12 14 16 5 10 30 50 300 -30 -5 -3 -1 -0.5 -10 -0.3 -50 y fe fe f=1mhz =-90 ta=25 c re fe phase angle of forward transfer admittance ( ) common emitter v =6v f=1mhz ta=25 c ce y parameters (typ.) (common emitter v ce =6v, i e =-1ma, f=1mhz) characteristic symbol KTC3878S-r KTC3878S-o KTC3878S-y unit input conductance g ie 0.5 0.35 0.22 ms input capacitance c ie 50 48 46 pf output conductance g oe 4 5 6.5 s output capacitance c oe 3.7 3.4 3.2 pf forward transfer admittance |y fe | 36 36 36 ms phase angle of forward transfer admittance fe -1.6 -1.6 -1.6 . reverse transfer admittance |y re | 14 14 14 s phase angle of reverse transfer admittance re -90 -90 -90 .
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